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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
IXFH40N50Q2
VDSS = 500 V = 40 A ID25 RDS(on) = 0.16
trr 250 ns
Maximum Ratings 500 500 30 40 40 160 40 50 2.5 20 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
Features Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages Easy to mount Space savings High power density
1.13/10 Nm/lb.in. 6 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 5.0 200 TJ = 25C TJ = 125C 25 1 0.16 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS98970C(04/04)
IXFH40N50Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 28 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 680 170 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External), 13 42 8 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 25 50 0.22 0.25 S
1 2 3
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 160 1.5 250 A A V ns C A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A -di/dt = 100 A/s, VR = 100 V 1 9
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXFH40N50Q2
Fig. 1. Output Characteris tics @ 25C
40 35 30 VGS = 10V 8V 7V 6V 90 80 70 VGS = 10V 8V
Fig. 2. Extended Output Characteris tics @ 25C
I D - Amperes
25 20 15
I D - Amperes
60 50 40 30 20
7V
5.5V 5V
6V
10 5 0 0 1 2 3 4 5 6 7 4.5V
10 0 0 3 6 9 12
5V 15 18 21 24 27 30
V D S - Volts Fig. 3. Output Characteris tics @ 125C
40 35 30 VGS = 10V 8V 7V 3.1 2.8 6V VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m pe rature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 20A I D = 40A
I D - Amperes
25 20 15 10
5.5V
5V
4.5V 5 0 0 2 4 6
V D S - Volts
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs. Case Tem perature
Fig. 5. RDS(on) Norm alized to
3.1 2.8
0.5 ID25 Value vs. ID
VGS = 10V TJ = 125C
45 40 35
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0 10 20 30
I D - Amperes
TJ = 25C
30 25 20 15 10 5 0
I D - Amperes
40
50
60
70
80
90
100
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXFH40N50Q2
Fig. 7. Input Adm ittance
50 45 40 50 45 40 TJ = -40C 25C 125C
Fig. 8. Trans conductance
g f s - Siemens
I D - Amperes
35 30 25 20 15 10 5 0 3 3.5 4 4.5 5 5.5 6 6.5 TJ = 125C 25C -40C
35 30 25 20 15 10 5 0 0 5
10
15
20
25
30
35
40
45
50
55
V G S - Volts Fig. 9. Source Current vs. Source -To-Drain Voltage
120 110 100 90 80 70 60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 TJ = 25C TJ = 125C 10 9 8 7 VDS = 250V I D = 20A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz 1000
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope rating Area
TJ = 150C TC = 25C
Capacitance - picoFarads
C iss
R DS(on) Limit
I D - Amperes
100 25s 100s 10 DC 1ms 10ms
1000 C oss
C rss 100 0 5 10 15 20 25 30 35 40 1 10 100 1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFH40N50Q2
Fig. 13. Maximum Transient Thermal Resistance
1.00
R ( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000 10000
Pulse Width - milliseconds
(c) 2004 IXYS All rights reserved

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